DISLOCATION GENERATION DUE TO DIFFERENCES BETWEEN THE COEFFICIENTS OF THERMAL-EXPANSION

被引：985

作者：

ARSENAULT, RJ ^{[1
]}

SHI, N ^{[1
]}

机构：

[1] UNIV MARYLAND,MET MAT LAB,COLLEGE PK,MD 20742

来源：

MATERIALS SCIENCE AND ENGINEERING | 1986年 / 81卷 / 1-2期

关键词：

CRYSTALLOGRAPHY - Mathematical Models - CRYSTALS - Dislocations - MICROSCOPIC EXAMINATION - Transmission Electron Microscopy - SILICON CARBIDE - Thermal Expansion;

D O I：

10.1016/0025-5416(86)90261-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The purpose of this investigation is to determine whether dislocation generation occurs at the Al-SiC interface on cooling a composite from annealing temperatures. An in situ transmission electron microscopy investigation was undertaken of dislocation generation at the inclusions due to the differential thermal contraction. A simple model based on prismatic punching was developed to account for the relative dislocation density due to the differential thermal contraction.

引用

页码：175 / 187

页数：13

共 20 条

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