ELECTRON-HOLE DROPLETS AND IMPURITY BAND STATES IN HEAVILY DOPED SI(P) - PHOTOLUMINESCENCE EXPERIMENTS AND THEORY

被引：28

作者：

BERGERSEN, B ^{[1
]}

ROSTWOROWSKI, JA ^{[1
]}

ESWARAN, M ^{[1
]}

PARSONS, RR ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT PHYS,VANCOUVER V6T 1W5,BRITISH COLUMBI,CANADA

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.14.1633

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1633 / 1648

页数：16

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