OPTOELECTRONIC DEVICE STRUCTURES FABRICATED BY IMPURITY INDUCED DISORDERING

被引：12

作者：

THORNTON, RL

BURNHAM, RD

PAOLI, TL

HOLONYAK, N

DEPPE, DG

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90360-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：621 / 628

页数：8

共 25 条

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THIBIERGE, H ;

BRILLOUET, F ;

ALEXANDRE, F ;

AZOULAY, R .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :867-869

[22] ALGAAS/GAAS MULTIQUANTUM WELL LASERS WITH BURIED MULTIQUANTUM WELL OPTICAL GUIDE [J].

SEMURA, S ;

OHTA, T ;

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NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L548-L550

[23]

SHIMIZU N, 1985, 32ND SPRING M JAP SO

[24] HIGHLY EFFICIENT MULTIPLE EMITTER INDEX GUIDED ARRAY LASERS FABRICATED BY SILICON IMPURITY INDUCED DISORDERING [J].

THORNTON, RL ;

BURNHAM, RD ;

PAOLI, TL ;

HOLONYAK, N ;

DEPPE, DG .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :7-9

[25] LOW THRESHOLD PLANAR BURIED HETEROSTRUCTURE LASERS FABRICATED BY IMPURITY-INDUCED DISORDERING [J].

THORNTON, RL ;

BURNHAM, RD ;

PAOLI, TL ;

HOLONYAK, N ;

DEPPE, DG .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1239-1241

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