2ND-HARMONIC GENERATION FROM THICK THERMAL OXIDES ON SI(111) - THE INFLUENCE OF MULTIPLE REFLECTIONS

被引：23

作者：

VANHASSELT, CW ^{[1
]}

DEVILLERS, MAC ^{[1
]}

RASING, T ^{[1
]}

AKTSIPETROV, OA ^{[1
]}

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV,DEPT PHYS,MOSCOW 119899,RUSSIA

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1995年 / 12卷 / 01期

关键词：

D O I：

10.1364/JOSAB.12.000033

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Recently a number of second-harmonic-generation (SHG) experiments on (thick) oxide films on Si were performed as studies of the possible presence of strain, crystalline SiO2, a static electric field, and roughness at the Si-SiO2 interface. Large enhancements of the SHG anisotropy have been observed for thick oxide films. We show here that the SHG for thick thermal oxide films on Si(lll) as a function of oxide thickness and angle of incidence is dominated by linear optics, owing to multiple reflections in the oxide film.

引用

页码：33 / 36

页数：4

共 26 条

[1]

Aktsipetrov O. A., 1984, Soviet Physics - Doklady, V29, P37

[2]

Aktsipetrov O. A., 1989, Soviet Technical Physics Letters, V15, P719

[3]

AKTSIPETROV OA, 1986, ZH EKSP TEOR FIZ, V64, P167

[4]

[Anonymous], 1985, HDB OPTICAL CONSTANT

[5] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[6] OPTICAL HARMONIC-GENERATION AND MIXING IN MULTILAYER MEDIA - EXTENSION OF OPTICAL TRANSFER-MATRIX APPROACH TO INCLUDE ANISOTROPIC MATERIALS [J].

BETHUNE, DS .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1991, 8 (02) :367-373

[7] 2ND-HARMONIC GENERATION IN SI-SIO2 HETEROSTRUCTURES FORMED BY CHEMICAL, THERMAL, AND PLASMA-ASSISTED OXIDATION AND DEPOSITION PROCESSES [J].

BJORKMAN, CH ;

SHEARON, CE ;

MA, Y ;

YASUDA, T ;

LUCOVSKY, G ;

EMMERICHS, U ;

MEYER, C ;

LEO, K ;

KURZ, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :964-970

[8] INFLUENCE OF SURFACE-ROUGHNESS ON THE ELECTRICAL-PROPERTIES OF SI-SIO2 INTERFACES AND ON 2ND-HARMONIC GENERATION AT THESE INTERFACES [J].

BJORKMAN, CH ;

YASUDA, T ;

SHEARON, CE ;

MA, Y ;

LUCOVSKY, G ;

EMMERICHS, U ;

MEYER, C ;

LEO, K ;

KURZ, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04) :1521-1527

[9]

Born M., 1980, PRINCIPLES OPTICS

[10] IDENTIFICATION OF STRAINED SILICON LAYERS AT SI-SIO2 INTERFACES AND CLEAN SI SURFACES BY NONLINEAR-OPTICAL SPECTROSCOPY [J].

DAUM, W ;

KRAUSE, HJ ;

REICHEL, U ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1993, 71 (08) :1234-1237

← 1 2 3 →