ION-IMPLANTATION IN SI/SI1-XGEX EPITAXIAL LAYERS AND SUPERLATTICES

被引：13

作者：

MANTL, S

HOLLANDER, B

JAGER, W

KABIUS, B

JORKE, HJ

KASPER, E

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST FESTKORPERFORSCH, D-5170 JULICH 1, FED REP GER

[2] AEG TELEFUNKEN, D-7900 ULM, FED REP GER

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90814-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：405 / 408

页数：4

共 14 条

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[2]

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MAHER, DM ;

KNOELL, RV .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :435-442

[5]

Feldman L.C., 1982, MAT ANAL ION CHANNEL, P88

[6] STRAIN IN ULTRATHIN EPITAXIAL-FILMS OF GE/SI(100) MEASURED BY ION-SCATTERING AND CHANNELING [J].

FELDMAN, LC ;

BEVK, J ;

DAVIDSON, BA ;

GOSSMANN, HJ ;

MANNAERTS, JP .

PHYSICAL REVIEW LETTERS, 1987, 59 (06) :664-667

[7] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J].

FIORY, AT ;

BEAN, JC ;

HULL, R ;

NAKAHARA, S .

PHYSICAL REVIEW B, 1985, 31 (06) :4063-4065

[8]

FIORY AT, 1984, MATER RES SOC S P, V25, P497

[9]

HOLLANDER B, IN PRESS

[10]

JORKE H, 1986, J ELECTROCHEM SOC, V113, P998

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