CERAMIC LAYER EPITAXY BY PULSED LASER DEPOSITION IN AN ULTRAHIGH-VACUUM SYSTEM

被引：83

作者：

KOINUMA, H

NAGATA, H

TSUKAHARA, T

GONDA, S

YOSHIMOTO, M

机构：

[1] Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Midori-ku, Yokohama 227

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 18期

关键词：

D O I：

10.1063/1.105002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ceramic layer epitaxy, defined as the epitaxial growth of ceramic thin films with thicknesses regulated on an atomic scale, was verified by a new method using pulsed laser deposition in ultrahigh vacuum (UHV). The intensity oscillation of reflection high-energy electron diffraction (RHEED) was observed in an ArF excimer laser deposition of CeO2 and SrTiO3 films on Si(111) and SrTiO3(001) substrates, respectively, at 650-750-degrees-C under 5 x 10(-7) Pa. The oscillation periodicities corresponded well to interplane distances of CeO2(111) and SrTiO3(001). This first observation of RHEED oscillation in laser deposition of ceramic films suggests that UHV laser deposition is a promising method for producing atomically regulated ceramic layers inclusive of possible new high T(c) superconductors.

引用

页码：2027 / 2029

页数：3

共 17 条

[1] FORMATION OF SUPERCONDUCTING BI-SR-CA-CU-O THIN-FILMS WITH CONTROLLED C-AXIS LATTICE SPACINGS BY MULTITARGET SPUTTERING [J].