PHOTOLUMINESCENCE OF THIN OXIDE LAYERS ON METALLIC SUBSTRATES (CU2O/CU AND ZNO/ZN)

被引:15
作者
LEFEZ, B
LENGLET, M
机构
[1] Laboratoire de Physicochimie des Matériaux, INSA ROUEN, 76131 Mont Saint Aignan Cedex
关键词
D O I
10.1016/0009-2614(91)87027-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photoluminescence of zinc and copper oxide layers is studied. The results obtained, emission and excitation spectra, with oxide layers (thickness less-than-or-equal-to 1-mu-m) are similar to reported photoluminescence from large layers and single crystals. Models for the centers responsible for the emission are proposed.
引用
收藏
页码:223 / 226
页数:4
相关论文
共 22 条
[1]  
BERNSTEIN JJ, 1980, P IEEE, P434
[2]  
Bloem J., 1958, PHILIPS RES REP, V13, P167
[3]   OPTICAL-PROPERTIES OF MICROCRYSTALLINE ZINC-OXIDE - INFLUENCE OF DEFECTS PRODUCED BY INTERACTION WITH CARBON-MONOXIDE [J].
BOCCUZZI, F ;
GHIOTTI, G ;
CHIORINO, A .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1983, 79 :1779-1789
[4]  
COX PA, 1987, ELECTRONIC STRUCTURE
[5]   ANNEALING-INDUCED POSITRON TRAPPING IN CU2O SINGLE-CRYSTALS [J].
DELACRUZ, RM ;
PAREJA, R ;
DIAZ, L ;
GARCIARAMOS, JV .
SOLID STATE COMMUNICATIONS, 1989, 71 (02) :93-95
[6]   EXCITATION CHARACTERISTICS OF IR LUMINESCENCE IN CU2O [J].
DUVVURY, C ;
KENWAY, DJ ;
WEICHMAN, FL .
JOURNAL OF LUMINESCENCE, 1975, 10 (06) :415-418
[7]  
ELELA AHA, 1981, J MATER SCI, V16, P2726
[8]   INFLUENCE OF DEFECTS ON THE ELECTRONIC-STRUCTURE OF ZINC-OXIDE SURFACES [J].
GOPEL, W ;
LAMPE, U .
PHYSICAL REVIEW B, 1980, 22 (12) :6447-6462
[9]  
GORBAN IS, 1962, FIZ TVERD TELA+, V3, P1559
[10]  
HIDEHITO N, 1983, J MATER SCI, V18, P2721