OPTICAL-PARAMETERS OF ABSORBING SEMICONDUCTORS FROM TRANSMISSION AND REFLECTION

被引：15

作者：

EPSTEIN, KA

MISEMER, DK

VERNSTROM, GD

机构：

[1] 3M Electronic and Information Technologies Sector Laboratory, St. Paul, MN 55144, United States

来源：

APPLIED OPTICS | 1987年 / 26卷 / 02期

关键词：

Refraction - Refractive index;

D O I：

10.1364/AO.26.000294

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A new method for obtaining the complex index of refraction from transmission and reflection data is proposed. The technique is similar to those of Manifacier and Swanepoel in that it uses interference extrema. We demonstrate that our method yields better results than the method of Swanepoel for index of refraction and comparable results for thickness and extinction coefficient. We also show a simple technique for correcting the data for finite bandwidth and surface roughness. © 1987 Optical Society of America.

引用

页码：294 / 299

页数：6

共 16 条

[1]

CODY GD, 1984, SEMICONDUCTORS SEM B, V21, P20

[2] DETERMINATION OF OPTICAL-CONSTANTS OF THIN-FILMS FROM MEASUREMENTS OF REFLECTANCE AND TRANSMITTANCE AT NORMAL INCIDENCE [J].