MODIFICATION OF SEMICONDUCTOR-DEVICE CHARACTERISTICS BY LASERS

被引：6

作者：

KIANG, YC ^{[1
]}

MOULIC, JR ^{[1
]}

CHU, WK ^{[1
]}

YEN, AC ^{[1
]}

机构：

[1] IBM CORP, E FISHKILL FACIL, GEN TECHNOL DIV LAB, HOPEWELL JUNCTION, NY 12533 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1982年 / 26卷 / 02期

关键词：

D O I：

10.1147/rd.262.0171

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：171 / 176

页数：6

共 10 条

[1] PROPERTIES OF LASER-ASSISTED DOPING IN SILICON [J].

AFFOLTER, K ;

LUTHY, W ;

VONALLMEN, M .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :185-187

[2] DYNAMICS OF Q-SWITCHED LASER ANNEALING [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SIMONS, AL ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :777-779

[3]

DEUTSCH TF, 1981, IEEE J QUANTUM ELECT, V17, P110

[4] P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION [J].

NARAYAN, J ;

YOUNG, RT ;

WOOD, RF ;

CHRISTIE, WH .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :338-340

[5]

Parker D., COMMUNICATION

[6]

RUNYAN WR, 1965, SILICON SEMICONDUCTO, P187

[7]

SIGMON TW, 1981, LASER ELECTRONBEAM P

[8]

WARNER RM, 1965, INTEGRATED CIRCUITS

[9]

WHITE CW, 1980, LASER ELECTRON BEAM

[10] ELECTRICAL AND STRUCTURAL CHARACTERISTICS OF LASER-INDUCED EPITAXIAL LAYERS IN SILICON [J].

YOUNG, RT ;

NARAYAN, J ;

WOOD, RF .

APPLIED PHYSICS LETTERS, 1979, 35 (06) :447-449

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