COLLECTOR-TOP GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR HIGH-SPEED DIGITAL ICS

被引：25

作者：

MORIZUKA, K

NOZU, T

TSUDA, K

AZUMA, M

机构：

来源：

关键词：

D O I：

10.1049/el:19860216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：315 / 316

页数：2

共 7 条

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KASAHARA, J ;

TAIRA, K ;

KATO, Y ;

ARAI, M ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06) :L373-L375

[3] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

[4]

Nakamura T., 1982, International Electron Devices Meeting. Technical Digest, P684

[5]

NAKAMURA T, 1984, ISSCC, P152

[6]

YOSHIDA J, 1985, 17TH P C SOL STAT DE, P22

[7]

Yuan H. T., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P100