OBSERVATION OF A LOCAL VIBRATIONAL-MODE OF DX CENTERS IN SI DOPED GAAS

被引：5

作者：

WOLK, JA

KRUGER, MB

HEYMAN, JN

WALUKIEWICZ, W

JEANLOZ, R

HALLER, EE

机构：

[1] Dept. of Phys., California Univ., Berkeley, CA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 10B期

关键词：

D O I：

10.1088/0268-1242/6/10B/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the observation of a new local vibrational mode (LVM) in hydrostatically stressed, Si-doped GaAs. The corresponding infrared absorption peak is distinct from the Si(Ga) shallow-donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX centre. Analysis of the relative intensities of the Si DX LVM and the Si shallow-donor LVM peaks has been combined with Hall effect and resistivity analysis to infer that the Si DX centre is negatively charged.

引用

页码：B78 / B83

页数：6

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