NONBOLOMETRIC NBN PHOTODETECTOR

被引：4

作者：

JOHNSON, MW ^{[1
]}

DOMINO, AM ^{[1
]}

KADIN, AM ^{[1
]}

机构：

[1] UNIV ROCHESTER,DEPT ELECT ENGN,ROCHESTER,NY 14627

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/77.403119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There have been Several recent reports of apparently nonbolometric optical responses in superconducting thin films. The photoresponse of 10nm thin superconducting NbN meander lines on Si is measured at 670nm using a diode laser modulated to more than 100kHz. Several types of photoresponse are identified, some apparently due to the Si substrate. A fast photoresponse due to the NbN film with a responsivity of up to 125V/W of absorbed power was observed. Results are analyzed in the context of a bolometric model, and the magnitude of the photoresponse is found to be too large for a purely bolometric response. Possible nonbolometric alternatives are discussed.

引用

页码：2587 / 2590

页数：4

共 10 条

[1]

CULBERTSON JC, 1990, PHYS REV B, V44, P9609

[2]

Gershenzon E. M., 1989, Soviet Physics - Technical Physics, V34, P195

[3]

GOUSEV YP, 1994, J APPL PHYS, V75

[4] PHOTOFLUXONIC DETECTION - A NEW MECHANISM FOR INFRARED DETECTION IN SUPERCONDUCTING THIN-FILMS [J].