STUDIES OF THE FRACTIONAL QUANTUM HALL-EFFECT IN A SILICON MOSFET

被引：11

作者：

FURNEAUX, JE

SYPHERS, DA

BROOKS, JS

SCHMIEDESHOFF, GM

WHEELER, RG

STILES, PJ

机构：

[1] UNIV OREGON,EUGENE,OR 97403

[2] BOSTON UNIV,WALTHAM,MA 02154

[3] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

[4] YALE UNIV,NEW HAVEN,CT 06520

[5] BROWN UNIV,PROVIDENCE,RI 02912

来源：

关键词：

D O I：

10.1016/0039-6028(86)90955-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：154 / 159

页数：6

共 9 条

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[2] GAVRILOV MG, 1985, 17TH P INT C PHYS SE, P287
[3] LAUGHLIN RB, 1985, B AM PHYS SOC, V30, P300
[4] QUANTIZED HALL-EFFECT AT LOW-TEMPERATURES
PAALANEN, MA
TSUI, DC
GOSSARD, AC
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5566 - 5569
[5] PUDALOV VM, 1984, JETP LETT+, V39, P170
[6] THEORY OF THE QUANTIZED HALL-EFFECT
THOULESS, DJ
[J]. SURFACE SCIENCE, 1984, 142 (1-3) : 147 - 154
[7] OBSERVATION OF A FRACTIONAL QUANTUM NUMBER
TSUI, DC
STORMER, HL
HWANG, JCM
BROOKS, JS
NAUGHTON, MJ
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 2274 - 2275
[8] TWO-DIMENSIONAL MAGNETOTRANSPORT IN THE EXTREME QUANTUM LIMIT
TSUI, DC
STORMER, HL
GOSSARD, AC
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (22) : 1559 - 1562
[9] VONKLITZING K, 1980, PHYS REV LETT, V45, P494, DOI 10.1103/PhysRevLett.45.494