STUDIES OF THE FRACTIONAL QUANTUM HALL-EFFECT IN A SILICON MOSFET

被引:11
作者
FURNEAUX, JE
SYPHERS, DA
BROOKS, JS
SCHMIEDESHOFF, GM
WHEELER, RG
STILES, PJ
机构
[1] UNIV OREGON,EUGENE,OR 97403
[2] BOSTON UNIV,WALTHAM,MA 02154
[3] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139
[4] YALE UNIV,NEW HAVEN,CT 06520
[5] BROWN UNIV,PROVIDENCE,RI 02912
关键词
D O I
10.1016/0039-6028(86)90955-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:154 / 159
页数:6
相关论文
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