External-field-induced electric dipole moment of biexcitons in a semiconductor

被引：5

作者：

Leisching, P

Ott, R

Bolivar, PH

Dekorsy, T

Bakker, HJ

Roskos, HG

Kurz, H

Kohler, K

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY

[2] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECHN II,D-52056 AACHEN,GERMANY

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.52.R16993

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the observation of an electric-field-induced electric dipole moment of biexcitonic molecules in a GaAs/Al0.3Ga0.7As superlattice. The macroscopic oscillating electric field, associated with the microscopic vibronic wave-packet dipole moments, is monitored by time-resolved transmittive electro-optic sampling. The field dependence of the biexcitonic binding energy is detected by transient four-wave mixing. From this experiment, an ultrafast nonresonant excitation mechanism of biexcitons is inferred.

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页码：16993 / 16996

页数：4

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