GROWTH OF PBTE DOPING SUPERLATTICES BY HOT WALL EPITAXY

被引：7

作者：

CLEMENS, H

机构：

[1] Montanuniversitaet Leoben, Leoben, Austria, Montanuniversitaet Leoben, Leoben, Austria

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 88卷 / 02期

关键词：

HOT WALL EPITAXY - SUPERLATTICES;

D O I：

10.1016/0022-0248(88)90281-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The doping behavior of different species for the growth of PbTe layers has been investigated. For doping with Te, a model calculation for the status of the Te source as a function of the temperature and time is presented and compared with experimental data. The doping of PbTe using Bi//2Te//3 and Tl//2Te sources was studied and typical carrier concentrations and mobilities are given. Finally the differences between the different dopants with respect to interdiffusion are discussed. These results are important for possible device application of PbTe nipi structures as IR detectors.

引用

页码：236 / 240

页数：5

共 22 条

[1] PARTIAL PRESSURES IN EQUILIBRIUM WITH GROUP 4 TELLURIDES .1. OPTICAL ABSORPTION METHOD + RESULTS FOR PBTE [J].