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THE DIFFUSION-COEFFICIENT OF INTERSTITIAL CARBON IN SILICON
被引：55
作者：
TIPPING, AK
NEWMAN, RC
机构：
[1] Univ of Reading, Reading, Engl, Univ of Reading, Reading, Engl
关键词：
SEMICONDUCTING SILICON - Radiation Effects - SPECTROSCOPY;
INFRARED;
D O I：
10.1088/0268-1242/2/5/013
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
FZ silicon has been irradiated at 140 K with 2 Mev electrons to displace substitutional carbon atoms C//s into interstitial sites C//i. The concentrations of the two species were determined from infrared LVM absorption measurements. Isothermal anneals in the range 297-331 K showed a loss of neutral C//i atoms with first order kinetics and the formation of di-carbon centers. From the known concentration of C//s traps, values of the diffusion coefficient were determined, which together with previous EPR reorientation data give D equals 0. 44 exp( minus 0. 87 ev/kT) cm**2s** minus **1.
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页码：315 / 317
页数：3
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