SURFACE FLASHOVER IN SILICON-VACUUM SYSTEMS

被引:6
作者
GRADINARU, G
MADANGARLI, VP
SUDARSHAN, TS
机构
[1] Department of Electrical and Computer Engineering, University of South Carolina, Columbia, SC
来源
IEEE TRANSACTIONS ON ELECTRICAL INSULATION | 1993年 / 28卷 / 04期
关键词
D O I
10.1109/14.231538
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The properties of the prebreakdown and breakdown response of silicon-vacuum systems under HV excitation are presented. The most frequent case of system breakdown by surface flashover is treated. The particular properties of the system response in the high field pulsed regime demonstrate the essential differences between the silicon-vacuum and solid insulator-vacuum systems. The main ideas of a new physical model of surface flashover in silicon-vacuum systems are presented. The properties of the surface flashover response are discussed in terms of the proposed model. A new concept called 'system surface flashover sensitivity' is introduced for a better understanding of the surface flashover physical process in silicon-vacuum systems.
引用
收藏
页码:555 / 565
页数:11
相关论文
共 20 条
[1]  
ANDERSON RA, 1990, 14TH P INT S DISCH E, P311
[2]   SURFACE BREAKDOWN OF SILICON [J].
FEUERSTEIN, RJ ;
SENITZKY, B .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :288-298
[3]  
GRADINARU G, 1992, 15TH INTERNATIONAL SYMPOSIUM ON DISCHARGES AND ELECTRICAL INSULATION IN VACUUM, P208
[4]   ON THE NEGATIVE DIFFERENTIAL RESISTANCE EFFECT IN HIGH-FIELD SEMICONDUCTOR-DIELECTRIC SYSTEMS [J].
GRADINARU, G ;
MADANGARLI, VP ;
SUDARSHAN, TS .
APPLIED PHYSICS LETTERS, 1992, 61 (01) :55-57
[5]  
GRADINARU G, 1992, 20TH IEEE POW MOD S, P331
[6]  
GRADINARU G, 1993, JAN SPIE OE LASE 93
[7]  
GRADINARU G, 1992, HIGH FIELD SEMICONDU, P435
[8]  
GRADINARU G, 1993, J APPL PHYS 0601
[9]  
Kern W., 1983, RCA ENG, P99
[10]  
MADANGARLI VP, 1992, 20TH IEEE POW MOD S, P297