PERFORMANCE OF GAAS MESFET OSCILLATORS IN FREQUENCY-RANGE 8-25 GHZ

被引:10
作者
TSERNG, HQ [1 ]
MACKSEY, HM [1 ]
SOKOLOV, V [1 ]
机构
[1] TEXAS INSTR INC,DALLAS,TX 75222
关键词
D O I
10.1049/el:19770057
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:85 / 86
页数:2
相关论文
共 6 条
[1]  
ABE H, 1976, IEEE INT SOLID STATE, P164
[2]  
MACKSEY HM, TO BE PUBLISHED
[3]  
MAEDA M, IEEE T MTT, V23, P661
[4]   COMMON-GATE GAAS FET OSCILLATOR [J].
OMORI, M ;
NISHIMOTO, C .
ELECTRONICS LETTERS, 1975, 11 (16) :369-371
[5]   EXPERIMENTS ON INTEGRATED GALLIUM-ARSENIDE FET OSCILLATORS AT X BAND [J].
PUCEL, RA ;
BERA, R ;
MASSE, D .
ELECTRONICS LETTERS, 1975, 11 (10) :219-220
[6]   ALUMINA MICROSTRIP GAAS FET 11 GHZ OSCILLATOR [J].
SLAYMAKER, NA ;
TURNER, JA .
ELECTRONICS LETTERS, 1975, 11 (14) :300-301