GIANT ENHANCEMENT OF IMPURITY SCATTERING AT WEAKLY BONDED LOCALIZED DEFECTS IN SEMICONDUCTORS

被引:3
作者
NINNO, D
JAROS, M
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 28期
关键词
D O I
10.1088/0022-3719/17/28/006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L745 / L750
页数:6
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