CHLORIDE VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAINP

[1] ASAI H, 1983, J APPL PHYS, V54, P6958

[2] DECREMOUX B, 1981, I PHYS C SER, V56, P115

[3] ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 987 - 989

[4] ITO K, 1974, T IEE JAPAN A, V94, P45

[5] IWAMOTO T, 1983, JPN J APPL PHYS, V7, pL429

[6] INFLUENCE OF LATTICE MISMATCH ON PHOTOLUMINESCENCE FROM LIQUID-PHASE EPITAXIAL GROWN INGAP ON GAAS SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) : 728 - 734

[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAP INAIP QUANTUM WELL STRUCTURES FOR THE VISIBLE WAVELENGTH REGION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 152 - 154

[8] OMVPE GROWTH OF GALLIUM INDIUM-PHOSPHIDE ON THE (100) GALLIUM-ARSENIDE USING ADDUCT COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) : 377 - 384

[9] NELSON RJ, 1970, J PHYS CHEM SOLIDS, V37, P629

[10] OHKI Y, 1974, J CRYST GROWTH, V24, P224

[1] ASAI H, 1983, J APPL PHYS, V54, P6958

[2] DECREMOUX B, 1981, I PHYS C SER, V56, P115

[3] ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 987 - 989

[4] ITO K, 1974, T IEE JAPAN A, V94, P45

[5] IWAMOTO T, 1983, JPN J APPL PHYS, V7, pL429

[6] INFLUENCE OF LATTICE MISMATCH ON PHOTOLUMINESCENCE FROM LIQUID-PHASE EPITAXIAL GROWN INGAP ON GAAS SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) : 728 - 734

[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAP INAIP QUANTUM WELL STRUCTURES FOR THE VISIBLE WAVELENGTH REGION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 152 - 154

[8] OMVPE GROWTH OF GALLIUM INDIUM-PHOSPHIDE ON THE (100) GALLIUM-ARSENIDE USING ADDUCT COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) : 377 - 384

[9] NELSON RJ, 1970, J PHYS CHEM SOLIDS, V37, P629

[10] OHKI Y, 1974, J CRYST GROWTH, V24, P224