Electrical properties of diamond films grown at low temperature

被引:10
作者
Chen, CF
Chen, SH
Lin, KM
机构
[1] Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu
关键词
diamond; electrical properties and measurements;
D O I
10.1016/0040-6090(95)06886-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The unique electronic properties of diamond, associated with the emergence of chemical vapour deposition (CVD) methods for the growth of thin films on non-diamond substrates, have led to considerable interest in electronic devices fabricated from this material. In our previous work, we found that polycrystalline diamond films can be deposited at 250 degrees C using CH4-CO2 gas mixtures. Studying the electrical properties and the upcoming problems of applications of low-temperature diamond films are relevant concerns. In this work, the electrical properties of diamond films grown at low temperatures were studied and compared with those of conventional diamond films. Platinum was used as the upper electrode. The resistivity of low-temperature diamond was around three orders of magnititude lower than that of conventional diamond. However, both the low temperature and conventional growth diamond exihibited rectifying behavior when platinum was used as the upper electrode.
引用
收藏
页码:205 / 209
页数:5
相关论文
共 20 条
[1]   ELECTRICAL-PROPERTIES OF HYDROGENATED DIAMOND [J].
ALBIN, S ;
WATKINS, L .
APPLIED PHYSICS LETTERS, 1990, 56 (15) :1454-1456
[2]   CRYSTALLIZATION OF DIAMOND FROM THE GAS-PHASE .1. [J].
BADZIAN, AR ;
DEVRIES, RC .
MATERIALS RESEARCH BULLETIN, 1988, 23 (03) :385-400
[3]  
CELII FG, 1991, NEW DIAMOND SCI TECH
[4]   LOW-TEMPERATURE GROWTH OF DIAMOND FILMS BY MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION USING CH4+CO2 GAS-MIXTURES [J].
CHEN, CF ;
CHEN, SH ;
KO, HW ;
HSU, SE .
DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) :443-447
[5]   CHARACTERIZATION OF DIAMOND FILMS DEPOSITED USING C3H6OX-H2 GAS-MIXTURES [J].
CHEN, CF ;
CHEN, SH ;
HONG, TM ;
WU, SH .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :732-736
[6]   OPTICAL CHARACTERIZATION OF DIAMOND SYNTHESIZED USING CH4-CO2 GAS-MIXTURES WITHOUT SUPPLYING HYDROGEN GAS [J].
CHEN, CF ;
CHEN, SH ;
HONG, TM ;
LEU, JS .
THIN SOLID FILMS, 1994, 253 (1-2) :162-167
[7]   MICROWAVE DIAMOND SYNTHESIS WITH HIGH OXYGEN HYDROCARBONS (CARBON-DIOXIDE, OXYGEN) [J].
CHEN, CF ;
CHEN, SH ;
HONG, TM ;
KO, HW ;
SHEU, SE .
THIN SOLID FILMS, 1993, 236 (1-2) :120-124
[8]   LOW-TEMPERATURE DIAMOND GROWTH AND PLASMA SPECIES ANALYSIS USING METHANE-CARBON DIOXIDE GAS-MIXTURES [J].
CHEN, CF ;
CHEN, SH ;
HONG, TM ;
WANG, DP .
SCRIPTA METALLURGICA ET MATERIALIA, 1994, 31 (06) :775-780
[9]   ROLE OF HYDROGEN AND OXYGEN IN DIAMOND SYNTHESIS USING CARBON-DIOXIDE METHANE-GAS MIXTURES [J].
CHEN, CF ;
HONG, TM ;
CHEN, SH .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) :4483-4489
[10]   NATURE OF ACCEPTOR CENTRE IN SEMICONDUCTING DIAMOND [J].
COLLINS, AT ;
WILLIAMS, AW .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (13) :1789-&