REVERSIBLE PHOTOINDUCED MODIFICATION OF ELECTRON-CAPTURE CROSS-SECTION AT LOCALIZED STATES IN A-SI-H

被引：21

作者：

OKUSHI, H

MIYAGAWA, M

TOKUMARU, Y

YAMASAKI, S

OHEDA, H

TANAKA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 10期

关键词：

D O I：

10.1063/1.93779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：895 / 897

页数：3

共 16 条

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[4]

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[6] ENERGY-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF GAP STATES IN N-TYPE ALPHA-SI-H [J].

OKUSHI, H ;

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PHYSICAL REVIEW B, 1982, 25 (06) :4313-4316

[7] TEMPERATURE-DEPENDENCE OF ELECTRON-CAPTURE CROSS-SECTION OF LOCALIZED STATES IN A-SI-H [J].

OKUSHI, H ;

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TANAKA, K .

PHYSICAL REVIEW B, 1983, 27 (08) :5184-5187

[8] DETERMINATION OF THE DENSITY OF STATE DISTRIBUTION OF A-SI-H BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J].

OKUSHI, H ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) :L549-L552

[9] ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY - ITS APPLICATION TO THE STUDY OF GAP STATES OF A-SI-H [J].

OKUSHI, H ;

TOKUMARU, Y ;

YAMASAKI, S ;

OHEDA, H ;

TANAKA, K .

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[10]

Okushi H., 1982, Japanese Journal of Applied Physics, Supplement, V21, P259

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