BONDING GEOMETRIES OF CL ON SI(111) AND GE(111)

被引：9

作者：

BACHELET, GB ^{[1
]}

SCHLUTER, M ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：726 / 728

页数：3

共 24 条

[1] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].

BACHELET, GB ;

HAMANN, DR ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228

[2] DEFECTS IN DIAMOND - THE UNRELAXED VACANCY AND SUBSTITUTIONAL NITROGEN [J].

BACHELET, GB ;

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1981, 24 (08) :4736-4744

[3] STRUCTURAL-ENERGY CALCULATIONS BASED ON NORM-CONSERVING PSEUDOPOTENTIALS AND LOCALIZED GAUSSIAN-ORBITALS [J].

BACHELET, GB ;

GREENSIDE, HS ;

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1981, 24 (08) :4745-4752

[4] SELF-CONSISTENT CALCULATIONS OF THE ELECTRONIC-STRUCTURE FOR IDEAL GA AND AS VACANCIES IN GAAS [J].

BACHELET, GB ;

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1981, 24 (02) :915-925

[5]

BACHELET GB, UNPUB

[6] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686

[7] ENFEEBLED OXYGEN BONDING AND METASTABILITY IN GAP-O [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1982, 25 (02) :548-560

[8]

CITRIN PH, IN PRESS

[9]

GREENSIDE HS, UNPUB PHYS REV B

[10] NORM-CONSERVING PSEUDOPOTENTIALS [J].

HAMANN, DR ;

SCHLUTER, M ;

CHIANG, C .

PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1494-1497

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