INTERDIFFUSION-INDUCED SURFACE-MORPHOLOGY IN LEAD-ALLOY JOSEPHSON TUNNEL JUNCTION ELECTRODES

被引：2

作者：

HUANG, HCW ^{[1
]}

SCHAD, RG ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.332559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3878 / 3885

页数：8

相关论文

共 22 条

[1] COMPUTING AT 4-DEGREES-K
ANACKER, W
[J]. IEEE SPECTRUM, 1979, 16 (05) : 26 - 37
[2] STRUCTURE OF TUNNEL BARRIER OXIDE FOR PB-ALLOY JOSEPHSON-JUNCTIONS
BAKER, JM
KIRCHER, CJ
MATTHEWS, JW
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) : 223 - 234
[3] DEVELOPMENT OF POROSITY DURING DIFFUSION IN SUBSTITUTIONAL SOLID SOLUTIONS
BALLUFFI, RW
ALEXANDER, BH
[J]. JOURNAL OF APPLIED PHYSICS, 1952, 23 (11) : 1237 - 1244
[4] DIMENSIONAL CHANGES NORMAL TO THE DIRECTION OF DIFFUSION
BALLUFFI, RW
ALEXANDER, BH
[J]. JOURNAL OF APPLIED PHYSICS, 1952, 23 (09) : 953 - 956
[5] EFFECTS ASSOCIATED WITH THE FLOW OF VACANCIES IN INTERMETALLIC DIFFUSION
BARNES, RS
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1952, 65 (391): : 512 - &
[6] BARNES RS, 1954, PHYSICAL SOC BRISTOL, P359
[7] DIFFUSION OF INDIUM IN LEAD FILMS CONTAINING GOLD
BROOM, RF
MOHR, TO
[J]. THIN SOLID FILMS, 1977, 47 (03) : 249 - 259
[8] MECHANISMS OF STRESS RELIEF IN POLYCRYSTALLINE FILMS
CHAUDHARI, P
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (02) : 197 - +
[9] CALCULATION OF DIFFUSION PENETRATION CURVES FOR SURFACE AND GRAIN BOUNDARY DIFFUSION
FISHER, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1951, 22 (01) : 74 - 77
[10] JOSEPHSON TUNNELING BARRIERS BY RF SPUTTER ETCHING IN AN OXYGEN PLASMA
GREINER, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 5151 - &