DIRECT OBSERVATION OF MONOATOMIC STEP BEHAVIOR IN MBE ON SI BY REFLECTION ELECTRON-MICROSCOPY

被引：9

作者：

ASEEV, AL

LATYSHEV, AV

KRASILNIKOV, AB

机构：

[1] Institute of Semiconductor Physics, Academy of Sciences, the USSR

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90774-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ultra-high vacuum reflection electron microscopy (UHV REM) has been applied to the in situ study of growth processes of Si, Ge and Au on Si(111). The peculiarites of growth island formation at epitaxy of Si and monoatomic step rearrangement during superstructural transitions at epitaxy of Ge and Au are discussed.

引用

页码：393 / 397

页数：5

共 7 条

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LATYSHEV, AV ;

ASEEV, AL ;

KRASILNIKOV, AB ;

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[3] INITIAL-STAGES OF SILICON HOMOEPITAXY STUDIED BY INSITU REFLECTION ELECTRON-MICROSCOPY [J].

LATYSHEV, AV ;

ASEEV, AL ;

KRASILNIKOV, AB ;

STENIN, SI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 113 (02) :421-430

[4]

LATYSHEV AV, IN PRESS J ELECTRON

[5]

LATYSHEV AV, 1989, 5TH P INT WORKSH PHY, P516

[6]

LITVIN LV, 1989, SURFACE SCI LETT, V224, pL121

[7]

SCHWOEBEL RL, 1966, J APPL PHYS, V37, P3662

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