THE EFFECT OF THE EXCITED IMPURITY STATES IN HEAVILY DOPED SEMICONDUCTORS

被引：7

作者：

FIGUEIRA, MS

MAKLER, SS

ANDA, EV

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 04期

关键词：

D O I：

10.1088/0022-3719/17/4/007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：623 / 636

页数：14

共 31 条

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