PHOTOLUMINESCENCE OF GAAS0.7P0.3

被引:5
作者
TUCK, B
机构
来源
PHYSICA STATUS SOLIDI | 1966年 / 18卷 / 02期
关键词
D O I
10.1002/pssb.19660180207
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:541 / &
相关论文
共 8 条
[1]   DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J].
CUNNELL, FA ;
GOOCH, CH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :127-133
[2]   RECOMBINATION SCHEME + INTRINSIC GAP VARIATION IN GAAS1-XPX SEMICONDUCTORS FROM ELECTRON BEAM + P-N DIODE EXCITATION (77 + 300 DEGREES K E) [J].
CUSANO, DA ;
CARLSON, RO ;
FENNER, GE .
APPLIED PHYSICS LETTERS, 1964, 5 (07) :144-&
[3]   PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J].
FINCH, WF ;
MEHAL, EW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :814-817
[4]   INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE [J].
HILL, DE .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A) :A866-&
[5]  
KU SM, 1963, SOLID STATE ELECTRON, V6, P505
[6]   RECOMBINATION RADIATION IN GAAS [J].
NATHAN, MI ;
BURNS, G .
PHYSICAL REVIEW, 1963, 129 (01) :125-&
[8]   QUANTUM EFFICIENCY AND RADIATIVE LIFETIME IN P-TYPE GALLIUM ARSENIDE [J].
VILMS, J ;
SPICER, WE .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2815-&