PROFILE STUDIES OF ION-IMPLANTED MESFETS

被引：13

作者：

GOLIO, JMM

TREW, RJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 12期

关键词：

D O I：

10.1109/T-ED.1983.21459

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1844 / 1849

页数：6

共 14 条

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[3]

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[4]

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STOLTE, CA .

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[8] VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING [J].

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[9]

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[10] COMPENSATION MECHANISMS IN GAAS [J].

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