EVALUATION OF STRUCTURAL QUALITY OF A SILICON-CARBIDE (6H-SIC) SINGLE-CRYSTAL GROWN BY A VAPOR TRANSPORT METHOD BY RUTHERFORD BACKSCATTERING SPECTROSCOPY

被引：6

作者：

KOBAYASHI, T ^{[1
]}

IWAKI, M ^{[1
]}

SAKAIRI, H ^{[1
]}

AONO, M ^{[1
]}

INOMATA, Y ^{[1
]}

机构：

[1] NATL INST RES INORGAN MAT,SAKURA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.343419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1790 / 1792

页数：3

共 8 条

[1]

[Anonymous], 1962, STRUCTURAL INORGANIC

[2]

APPLETON BR, 1977, ION BEAM HDB MATERIA

[3] THERMODYNAMIC STUDY OF SIC UTILIZING A MASS SPECTROMETER [J].

DROWART, J ;

DEMARIA, G ;

INGHRAM, MG .

JOURNAL OF CHEMICAL PHYSICS, 1958, 29 (05) :1015-1021

[4]

FELDMAN LC, 1982, MATERIALS ANAL ION C

[5] SYNTHESIS OF INCLUSION-FREE SIC SINGLE-CRYSTALS [J].

INOMATA, Y .

JOURNAL OF CRYSTAL GROWTH, 1972, 12 (01) :57-&

[6]

INOMATA Y, 1970, J CERAM ASS JPN, V78, P323

[7] CHANNELING STUDIES IN DIAMOND-TYPE LATTICES [J].

PICRAUX, ST ;

DAVIES, JA ;

ERIKSSON, L ;

JOHANSSON, NG ;

MAYER, JW .

PHYSICAL REVIEW, 1969, 180 (03) :873-+

[8] THERMAL CONDUCTIVITY OF PURE + IMPURE SILICON SILICON CARBIDE + DIAMOND [J].

SLACK, GA .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) :3460-+

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