ROUGH VERSUS DILUTE INTERFACES IN SEMICONDUCTOR HETEROSTRUCTURES - THE ROLE OF GROWTH-CONDITIONS

被引：15

作者：

GRIESHABER, W

BODIN, C

CIBERT, J

GAJ, J

DAUBIGNE, YM

WASIELA, A

FEUILLET, G

机构：

[1] UNIV J FOURIER,F-38402 ST MARTIN DHERES,FRANCE

[2] CEN GRENOBLE,CEA,DEPT RECH FONDAMENTALE MAT CONDENSEE,SP2M-PSC,F-38054 GRENOBLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.112097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CdTe-CdMnTe interfaces grown by molecular beam epitaxy are studied using excitons confined in quantum wells. For increasing growth temperatures Zeeman splittings indicate an enhanced dilution of Mn ions at the interface while the optical linewidths evidence a decreasing roughness. These results directly illustrate the fact that the two methods are sensitive to different scales of interface broadening.

引用

页码：1287 / 1289

页数：3

共 18 条

[1] DIMENSIONAL-CROSSOVER STUDIES OF MAGNETIC-SUSCEPTIBILITY IN DILUTED-MAGNETIC-SEMICONDUCTOR SUPERLATTICES [J].