THE PROPERTIES OF A METAL-OXIDE-SEMICONDUCTOR JUNCTION PREPARED USING A HIGH-PURITY OZONE SURFACE-TREATMENT

Electrical properties of the junction between a metal and an oxide semiconductor whose surface has been treated with high-purity ozone were investigated. in situ treatment of ozone on the surfaces of Nb-doped SrTiO3 (NSTO) and Nb-doped TiO2 (NTO) and in situ deposition of Au have been performed to make metal/semiconductor junctions. The I-V characteristics of the junctions show high rectification properties (the rectification ratios are over a ninth order of magnitude when the junctions are biased at 1.3 V) and the capacitance-voltage (C-V) characteristics show linear C-2-V relationships in the reverse condition. These results have indicated that the surface treatment of the oxide semiconductors using high-purity ozone and in situ deposition of metal electrodes drastically improve the Schottky properties of oxide semiconductor diodes. (C) 1995 American Institute of Physics.