学术探索
学术期刊
新闻热点
数据分析
智能评审

EFFECTS OF UNIAXIAL-STRESS ON HOLE SUBBANDS IN SEMICONDUCTOR QUANTUM WELLS .2. NUMERICAL RESULTS

被引：26
作者：
LEE, J
VASSELL, MO
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.37.8861
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：8861 / 8866
页数：6
相关论文
共 6 条
[1]   EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J].
CHANDRASEKHAR, M ;
POLLAK, FH .
PHYSICAL REVIEW B, 1977, 15 (04) :2127-2144
[2]  
JANANNATH C, 1986, PHYS REV B, V34, P7027
[3]  
KOTELES ES, 1986, 8TH P INT C PHYS SEM, P625
[4]   EFFECTS OF UNIAXIAL-STRESS ON HOLE SUBBANDS IN SEMICONDUCTOR QUANTUM WELLS .1. THEORY [J].
LEE, J ;
VASSELL, MO .
PHYSICAL REVIEW B, 1988, 37 (15) :8855-8860
[5]   MIXING OF VALENCE SUBBANDS IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM WELLS BY UNIAXIAL-STRESS [J].
LEE, J ;
JAGANNATH, C ;
VASSELL, MO ;
KOTELES, ES .
PHYSICAL REVIEW B, 1988, 37 (08) :4164-4170
[6]   EFFECTS OF UNIAXIAL-STRESS ON THE ELECTRONIC AND OPTICAL-PROPERTIES OF GAAS-ALXGA1-XAS QUANTUM WELLS [J].
SANDERS, GD ;
CHANG, YC .
PHYSICAL REVIEW B, 1985, 32 (06) :4282-4285
1