A LOW-COST ION ASSISTED EVAPORATION TECHNIQUE FOR AUGE/N-GAAS CONTACT FABRICATION

被引:3
作者
THOMAS, B
AHKTAR, MW
MORGAN, DV
MOHAMMED, MA
DAVIES, DE
机构
[1] EUROPEAN OFF AEROSP RES & DEV,LONDON,ENGLAND
[2] SCI RES COUNCIL,CTR ELECTR & COMP,BAGHDAD,IRAQ
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 120卷 / 01期
关键词
D O I
10.1002/pssa.2211200136
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:K45 / K47
页数:3
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[3]  
MORGAN DV, 1985, ION IMPLANTATION DAM
[4]  
RIDEOUT VL, 1975, SOLID STATE ELECTRON, V18, P514
[5]  
WILLIAM RE, 1984, GALLIUM ARSENIDE PRO, P225