NITRIDIZATION OF GALLIUM-ARSENIDE SURFACES - EFFECTS ON DIODE LEAKAGE CURRENTS

被引：24

作者：

PEARTON, SJ

HALLER, EE

ELLIOT, AG

机构：

[1] UNIV CALIF BERKELEY,BERKELEY,CA 94720

[2] HEWLETT PACKARD CO,DIV OPTOELECTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 07期

关键词：

D O I：

10.1063/1.94877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：684 / 686

页数：3

共 11 条

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[7] PASSIVATION OF GAAS-SURFACES [J].

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KILPATRICK, SJ ;

MAGEE, CW .

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[8] HYDROGEN PASSIVATION OF A BULK DONOR DEFECT (EC-0.36EV) IN GAAS [J].

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4509-4511

[9] HYDROGEN PASSIVATION OF DEEP DONOR CENTERS IN HIGH-PURITY EPITAXIAL GAAS [J].

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TAVENDALE, AJ .

ELECTRONICS LETTERS, 1982, 18 (16) :715-716

[10]

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