DOPING OF LPE LAYERS OF CDTE GROWN FROM TE SOLUTIONS

被引:9
作者
ASTLES, M [1 ]
GORDON, N [1 ]
BRADLEY, D [1 ]
DEAN, PJ [1 ]
WIGHT, DR [1 ]
BLACKMORE, G [1 ]
机构
[1] ADMIRALTY MARINE TECHNOL ESTAB,POOLE,DORSET,ENGLAND
关键词
D O I
10.1007/BF02659842
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:167 / 189
页数:23
相关论文
共 22 条
[1]  
BRYANT FJ, 1968, BRIT J APPL PHYS, V1, P965
[2]   IDENTIFICATION OF CU-ACCEPTOR AND AG-ACCEPTOR IN CDTE [J].
CHAMONAL, JP ;
MOLVA, E ;
PAUTRAT, JL .
SOLID STATE COMMUNICATIONS, 1982, 43 (11) :801-805
[3]   DEFECT STRUCTURE OF CDTE - HALL DATA [J].
CHERN, SS ;
VYDYANATH, HR ;
KROGER, FA .
JOURNAL OF SOLID STATE CHEMISTRY, 1975, 14 (01) :33-43
[4]  
de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361
[5]   CDXHG1-XTE N-TYPE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
FAURIE, JP ;
MILLION, A .
APPLIED PHYSICS LETTERS, 1982, 41 (03) :264-266
[6]  
GOURGOUT JM, 1979, 2 P SIMS C, P286
[7]   SLIDER LPE OF HG1-XCDXTE USING MERCURY PRESSURE CONTROLLED GROWTH SOLUTIONS [J].
HARMAN, TC .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :1069-1084
[8]   THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE [J].
IRVINE, SJC ;
MULLIN, JB .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :107-115
[9]   SELF-COMPENSATION IN II-VI-COMPOUNDS [J].
MARFAING, Y .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1981, 4 (04) :317-343
[10]   LATTICE SUPERDILATION PHENOMENA IN DOPED GAAS [J].
MULLIN, JB ;
STRAUGHAN, BW ;
DRISCOLL, CMH ;
WILLOUGHBY, AFW .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2584-2587