AR+ BOMBARDMENT OF SI(100) IN OXYGEN ATMOSPHERE - ROOM-TEMPERATURE OXIDE FORMATION STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：9

作者：

TERRASI, A ^{[1
]}

COLUZZA, C ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] CNR,IST NAZL METODOL & TECNOL MICROELETTRON,I-95121 CATANIA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 06期

关键词：

D O I：

10.1063/1.359896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the formation of silicon oxide thin films at room temperature obtained by Ar+ ion bombardment of Si(100) wafers in partial oxygen atmosphere. Samples have been prepared at several ion beam energies (0 less than or equal to E(b) less than or equal to 400 eV) and characterized by x-ray photoelectron spectroscopy. The oxidation rate, as well as the SiO2/SiOx (x = 0.5, x = 1, and x = 1.5) ratio, have been found to increase with the ion beam energy. For the highest energy bombardment, E(b) = 400 eV, we observed the formation of a uniform, electrically insulating, SiO2 top layer about 37 Angstrom thick. (C) 1995 American Institute of Physics.

引用

页码：3820 / 3823

页数：4

共 9 条

[1]

BARR TL, 1990, PRACTICAL SURFACE AN

[2]

DEAL BE, 1988, SEMICONDUCTOR MATERI

[3] A NEW ESCA INSTRUMENT WITH IMPROVED SURFACE SENSITIVITY, FAST IMAGING PROPERTIES AND EXCELLENT ENERGY RESOLUTION [J].

GELIUS, U ;

WANNBERG, B ;

BALTZER, P ;

FELLNERFELDEGG, H ;

CARLSSON, G ;

JOHANSSON, CG ;

LARSSON, J ;

MUNGER, P ;

VEGERFORS, G .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1990, 52 :747-785

[4]

Grunthaner F. J., 1986, Material Science Reports, V1, P65, DOI 10.1016/S0920-2307(86)80001-9

[5] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[6] XPS STUDY ON THE EARLY STAGES OF OXIDATION OF SI(100) BY ATOMIC OXYGEN [J].

NAMIKI, A ;

TANIMOTO, K ;

NAKAMURA, T ;

OHTAKE, N ;

SUZAKI, T .

SURFACE SCIENCE, 1989, 222 (2-3) :530-554

[7]

Nicollian E. H., 1982, METAL OXIDE SEMICOND

[8]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[9] INITIAL-STAGE OF THERMAL-OXIDATION OF THE SI(111)-(7X7) SURFACE [J].

TABE, M ;

CHIANG, TT ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1986, 34 (04) :2706-2717

← 1 →