THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM

被引：87

作者：

HECKINGBOTTOM, R

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：572 / 575

页数：4

共 22 条

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