LONG WAVELENGTH HIGH-SPEED SEMICONDUCTOR-LASERS WITH CARRIER TRANSPORT EFFECTS

被引：62

作者：

ISHIKAWA, M ^{[1
]}

NAGARAJAN, R ^{[1
]}

FUKUSHIMA, T ^{[1
]}

WASSERBAUER, JG ^{[1
]}

BOWERS, JE ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 10期

关键词：

D O I：

10.1109/3.159530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier transport has a significant role on the high-speed characteristics of semiconductor lasers. We show theoretically and experimentally that the low frequency rolloff and excess increase of damping due to carrier transport significantly limits the high-speed modulation bandwidth of long wavelength InGaAs(P)-InP quantum-well lasers. The inherent small conduction band offset and small hole diffusion constant of this material are responsible for the severe carrier transport effects. We also discuss the optimum design for the high speed modulation of the long wavelength lasers and the advantages of the InGaAlAs-InP material system.

引用

页码：2230 / 2241

页数：12

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