共 6 条
LIGHT-EMITTING-DIODES BASED ON P-PHENYLENE VINYLENE OLIGOMER
被引:13
作者:
WOO, HS
LEE, JG
MIN, HK
OH, EJ
PARK, SJ
LEE, KW
LEE, JH
CHO, SH
KIM, TW
PARK, CH
机构:
[1] MYONG JI UNIV,DEPT CHEM,YONG IN 449728,SOUTH KOREA
[2] HONGIK UNIV,DEPT PHYS,SEOUL 121791,SOUTH KOREA
[3] DAE YONG ELECT IND CO LTD,INCHON 467820,SOUTH KOREA
关键词:
D O I:
10.1016/0379-6779(94)03207-M
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Light emitting diode(LED) have been constructed using a kind of p-phenylene vinylene oligomer, 1,4 distyrylbenzene with absorption edge at 3.0 eV. This device consists of 1,4 - distyrylbenzene sandwiched between In and indium-tin oxide (ITO) contacts. In order to increase the electron injection into the emissive material, we have tried to insert thin Sr layer between In and oligomer, giving In/Sr/oligomer/ITO structure. I-V characteristics for devices with and without Sr layer show the noticeable difference in rectifying voltage, lowering down to 5 V with using Sr as an electron injection layer. For the device with Sr layer the current at 5 V is about 100 times higher than the device without Sr layer. In the dark illumination condition, our device shows visible blue-violet emission at room temperature after applying a bias exceeding 5 V.
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页码:2173 / 2174
页数:2
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