共 25 条
MAPPING OF RESIDUES FORMING THE VOLTAGE SENSOR OF THE VOLTAGE-DEPENDENT ANION-SELECTIVE CHANNEL
被引:108
作者:
THOMAS, L
BLACHLYDYSON, E
COLOMBINI, M
FORTE, M
机构:
[1] UNIV MARYLAND,DEPT ZOOL,COLL PK,MD 20742
[2] OREGON HLTH SCI UNIV,VOLLUM INST,PORTLAND,OR 97201
来源:
关键词:
VOLTAGE GATING;
BETA BARREL;
MITOCHONDRION;
OUTER MEMBRANE;
YEAST;
D O I:
10.1073/pnas.90.12.5446
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
Voltage-gated ion-channel proteins contain ''voltage-sensing'' domains that drive the conformational transitions between open and closed states in response to changes in transmembrane voltage. We have used site-directed mutagenesis to identify residues affecting the voltage sensitivity of a mitochondrial channel, the voltage-dependent anion-selective channel (VDAC). Although charge changes at many sites had no effect, at other sites substitutions that increased positive charge also increased the steepness of voltage dependance and substitutions that decreased positive charge decreased voltage dependance by an appropriate amount. In contrast to the plasma membrane K+ and Na+ channels, these residues are distributed over large parts of the VDAC protein. These results have been used to define the conformational transitions that accompany voltage gating of an ion channel. This gating mechanism requires the movement of large portions of the VDAC protein through the membrane.
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页码:5446 / 5449
页数:4
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