BULK AND SURFACE ELECTRONIC-STRUCTURES OF MGO

被引:121
作者
SCHONBERGER, U [1 ]
ARYASETIAWAN, F [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH, D-70569 STUTTGART, GERMANY
来源
PHYSICAL REVIEW B | 1995年 / 52卷 / 12期
关键词
D O I
10.1103/PhysRevB.52.8788
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The bulk electronic structure of MgO is calculated from first principles including correlation effects within the GW approximation. The band gap, the position of the 2s O band, and the valence band width are in good agreement with experiment. From the quasiparticle band structure, optical transitions corresponding to the main optical absorption peaks are identified. The energy-loss spectrum is also calculated and compared with experiment. The surface electronic structure of MgO(100) is calculated self-consistently within the local-density approximation. It is found that states observed in a recent photoemission experiment outside the bulk allowed states are close to surface states.
引用
收藏
页码:8788 / 8793
页数:6
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