GROWTH AND CHARACTERIZATION OF INGAASP-INP LATTICE-MATCHED HETEROJUNCTIONS

被引：56

作者：

SANKARAN, R ^{[1
]}

ANTYPAS, GA ^{[1
]}

MOON, RL ^{[1
]}

ESCHER, JS ^{[1
]}

JAMES, LW ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.569024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：932 / 937

页数：6

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[9] LOW-THRESHOLD LPE IN1-X'GAX'P1-Z'ASZ'-IN1-XGAXP1-ZASZ-IN1-X'GAX'P1-Z'ASZ' YELLOW DOUBLE-HETEROJUNCTION LASER-DIODES (J LESS THAN 104 A-CM2, LAMBDA EQUAL TO 5850 A, 77 DEGREESK)
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[10] PHOTOEMISSION FROM CESIUM-OXIDE-ACTIVATED IN GAASP
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