AN IMPROVED DISPLACEMENT DAMAGE MONITOR

被引：29

作者：

BARRY, AL ^{[1
]}

MAXSEINER, R ^{[1
]}

WOJCIK, R ^{[1
]}

BRIERE, MA ^{[1
]}

BRAUNIG, D ^{[1
]}

机构：

[1] HAHN MEITNER INST KERNFORSCH BERLIN GMBH,BERLIN,GERMANY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/23.101183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A frequency-domain technique for measuring carrier lifetime in GaAs LED displacement damage monitors capable of high sensitivity and repeatability has been developed. Applications of this technique are discribed, including the determination of displacement energy threshold in GaAs. The minimum electron energy for displacement damage has been measured as 270 ± 15 keV, corresponding to a threshold atomic displacement energy of 10.0 ± 0.7 eV, assuming the defect is a displaced arsenic atom. © 1990 IEEE

引用

页码：1726 / 1731

页数：6

共 12 条

[1]

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