LOW-TEMPERATURE-GROWN GAAS QUANTUM-WELLS - FEMTOSECOND NONLINEAR OPTICAL AND PARALLEL-FIELD TRANSPORT STUDIES

被引：33

作者：

KNOX, WH

DORAN, GE

ASOM, M

LIVESCU, G

LEIBENGUTH, R

CHU, SNG

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] AT&T BELL LABS,SSTC,BRIENIGSVILLE,PA 18031

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.105297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We find that GaAs-AlGaAs quantum wells grown at low temperature (300-degrees-C) by molecular beam epitaxy are nearly semi-insulating and exhibit a broadened excitonic resonance. Studies of the femtosecond time-resolved nonlinear optical saturation response and parallel-field transport properties indicate that a subpicosecond nonradiative decay dominates the carrier recombination of this material. Annealing of low-temperature-grown quantum wells causes the arsenic point defects to form arsenic metallic precipitates within the quantum wells and up-shifts the absorption edge.

引用

页码：1491 / 1493

页数：3

共 14 条

[1]

ASOM MT, UNPUB

[2] LIMITED THICKNESS EPITAXY IN GAAS MOLECULAR-BEAM EPITAXY NEAR 200-DEGREES-C [J].