INEFFICIENT CHARGE COLLECTION IN SILICON SURFACE BARRIER DETECTORS

被引：6

作者：

EISLER, P

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1966年 / 44卷 / 02期

关键词：

D O I：

10.1016/0029-554X(66)90158-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：253 / +

页数：1

共 15 条

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[2] ON THE ENERGY EXPENDED PER ELECTRON-HOLE-PAIR PRODUCED IN P-N-JUNCTION-DETECTORS [J].

BALDINGER, E ;

CZAJA, W .

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[3]

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[4]

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[5]

BROWN WL, 1961, IRE T NUCL SCI, VNS8, P2

[6] ON THE INDUCED CHARGE IN SEMICONDUCTOR DETECTORS [J].

CAVALLERI, G ;

FABRI, G ;

GATTI, E ;

SVELTO, V .

NUCLEAR INSTRUMENTS & METHODS, 1963, 21 (01) :177-178

[7]

DEARNALAY G, 1963, SEMICONDUCTOR COUNTE

[8] ENERGY FOR ELECTRON-HOLE PAIR GENERATION IN SILICON BY ALPHA PARTICLES [J].

FABRI, G ;

SVELTO, V ;

GATTI, E .

PHYSICAL REVIEW, 1963, 131 (01) :134-&

[9]

FOX RJ, 1962, IRE T NUCL SCI, VNS9, P213

[10]

HANSEN W, 1960, NASNRC PUBL, P202

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