ELECTRONIC PROPERTIES OF DEFECT-ZINCBLENDE SEMICONDUCTOR CDIN2SE4

被引：22

作者：

BALDERESCHI, A

MELONI, F

AYMERICH, F

MULA, G

机构：

[1] ECOLE POLYTECH FED LAUSANNE,APPL PHYS LAB,CH-1007 LAUSANNE,SWITZERLAND

[2] ECOLE POLYTECH FED LAUSANNE,APPL PHYS LAB,CH-1007 LAUSANNE,SWITZERLAND

[3] UNIV CAGLIARI,IST FIS,I-09100 CAGLIARI,ITALY

[4] UNIV CAGLIARI,IST FIS,I-09100 CAGLIARI,ITALY

[5] UNIV CAGLIARI,CNR,GRP NAZL STRUT MAT,I-09100 CAGLIARI,ITALY

[6] UNIV CAGLIARI,CNR,GRP NAZL STRUT MAT,I-09100 CAGLIARI,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 21卷 / 01期

关键词：

D O I：

10.1016/0038-1098(77)91490-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：113 / 116

页数：4

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