THE AMORPHIZATION OF CERAMICS BY ION-BEAMS

The influence of the implantation parameters fluence, substrate temperature and chemical species on the formation of amorphous phases in Al//2O//3 and alpha -SiC was studied. At 300 K, fluences in excess of 10**1**7 ions cm** minus **2 were generally required to amorphize Al//2O//3; however, the implantation of zirconium formed the amorphous phase at a fluence of 4 multiplied by 10**1**6 Zr** plus ions cm** minus **2. The microindentation hardness of the amorphous material was about 60% of that of the crystalline counterpart.