INSITU INVESTIGATION OF LOW-PRESSURE DIAMOND GROWTH BY ELASTIC-SCATTERING OF LIGHT AND REFLECTANCE SPECTROSCOPY

被引：8

作者：

BONNOT, AM ^{[1
]}

LOPEZRIOS, T ^{[1
]}

MATHIS, BS ^{[1
]}

LEROY, J ^{[1
]}

机构：

[1] CNRS, ETUD PROPRIETES ELECTR SOLIDES LAB, F-38042 GRENOBLE, FRANCE

来源：

关键词：

D O I：

10.1016/0925-9635(92)90017-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of diamond on silicon by the use of a hot filament and methane-hydrogen (0.5-2 vol.%) was investigated by measuring the elastic scattering and reflectivity of 1.96 eV radiation. A systematic study of the influence of the experimental parameters governing the diamond growth has been undertaken and correlated to in-situ optical measurements. This shows, as diamond gros, a strong increase of the elastic scattering and a simultaneous decrease of the reflectivity. These measurements have allowed to follow, in-situ, the diamond growth and estimate, in real time, of the crystal sizes. © 1992.

引用

页码：161 / 163

页数：3

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