STUDY OF SEUS GENERATED BY HIGH-ENERGY IONS

被引：7

作者：

DREUTE, J

ROCHER, H

HEINRICH, W

HARBOESORENSEN, R

ADAMS, L

SCHARDT, D

机构：

[1] ESA,ESTEC,2200 AG NOORDWIJK,NETHERLANDS

[2] GESELL SCHWERIONENFORSCH MBH,D-64220 DARMSTADT,GERMANY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 03期

关键词：

CMOS integrated circuits - Epitaxial growth - High energy physics - Ions - MOS devices - Random access storage - Semiconductor device structures - Semiconductor device testing - Substrates - Transistors;

D O I：

10.1109/23.299806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using 1 GeV/nucleon ions SEUs have been studied in two types of CMOS-SRAMs with respect to tilt angle and tilt direction. Tracks of upset bits, which have been observed under large tilt angles, were used to determine the charge collection depth in these devices.

引用

页码：601 / 606

页数：6

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[2]

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BEER, J ;

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HEINRICH, W .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 225 (01) :92-100

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