COMPUTER-SIMULATION OF DAMAGE PROCESSES DURING ION-IMPLANTATION

被引:26
作者
KANG, HJ
SHIMIZU, R
SAITO, T
YAMAKAWA, H
机构
[1] OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
[2] ULVAC CORP,DIV RES & DEV,CHIGASAKI,KANAGAWA 253,JAPAN
关键词
D O I
10.1063/1.339400
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2733 / 2737
页数:5
相关论文
共 13 条
[1]   MESSUNG DER ENERGIE ZUR VERLAGERUNG EINES GITTERATOMS DURCH ELEKTRONENSTOB IN AIIIBV-VERBINDUNGEN [J].
BAUERLEIN, R .
ZEITSCHRIFT FUR PHYSIK, 1963, 176 (04) :498-&
[2]  
BEHRISH R, 1981, TOPICS APPLIED PHYSI, V47, P73
[3]   ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].
DAVIES, JA ;
DENHARTO.J ;
ERIKSSON, L ;
MAYER, JW .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&
[4]   ENERGY-DEPENDENCE OF AMORPHIZING IMPLANT DOSE IN SILICON [J].
DENNIS, JR ;
HALE, EB .
APPLIED PHYSICS LETTERS, 1976, 29 (09) :523-524
[5]  
FIRSOV OB, 1971, SOV PHYS JETP, V61, P1453
[6]  
KANG HJ, 1984, JPN J APPL PHYS 2, V23, pL262, DOI 10.1143/JJAP.23.L262
[7]  
KASAHARA J, 1985, 1985 GAAS IC S IEEE, P37
[8]  
MAYER JW, 1968, CAN J PHYS, V46, P664
[9]   COMPUTER-SIMULATION OF ATOMIC-DISPLACEMENT CASCADES IN SOLIDS IN BINARY-COLLISION APPROXIMATION [J].
ROBINSON, MT ;
TORRENS, IM .
PHYSICAL REVIEW B, 1974, 9 (12) :5008-5024
[10]   COMPUTER-SIMULATION OF COLLISION CASCADES IN MONAZITE [J].
ROBINSON, MT .
PHYSICAL REVIEW B, 1983, 27 (09) :5347-5359